An Amorphous-Silicon Film Usable at High-Temperature –Annealing Properties of a New Fluorinated Amorphous-Silicon–

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Abstract
This is first report on an amorphous-silicon in which only fluorine atoms work as terminator of dangling bonds. This fluorinated amorphous-silicon is produced by radio-frequency sputtering in mixture of Ar and SiF4 gases, and variation of its fluorine content after annealing is measured by backscattering method together with variation of its temperature dependence of conductivity. As results, it is concluded that both fluorine content and temperature dependence of conductivity are kept unchanged even after 600°C annealing, and that this fluorinated amorphous-silicon is high-temperature usable.

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