Preparation and properties of plasma-anodized alumina-InP interfaces using in situ end point detection methods
- 1 January 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 103 (1-3) , 77-93
- https://doi.org/10.1016/0040-6090(83)90427-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Pulsed field effect channel current transients in plasma-anodized alumina/GaAs metal/insulator/ semiconductor field effect transistorsThin Solid Films, 1983
- Capacitance-voltage characteristics of Al-plasma anodic Al2O3-GaAs diodesJournal of Applied Physics, 1981
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- The plasma anodization to exhaustion of thin aluminium films on silicon substratesThin Solid Films, 1979
- Chemical effects in Schottky barrier formationJournal of Physics C: Solid State Physics, 1978