Changes in the Density of States of Germanium on Disordering as Observed by Photoemission
- 2 December 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 21 (23) , 1572-1575
- https://doi.org/10.1103/physrevlett.21.1572
Abstract
An optical density of states in amorphous Ge derived from photoemission measurements shows that the maximum in the valence-band density of states is shifted 1.5 eV to higher energy with respect to the crystalline density of states. No structure is observed in the conduction-band density of states for the amorphous material, whereas strong structure is present in the crysalline density of states. Changes observed in the optical properties of Ge on disordering can be explained using these results.Keywords
This publication has 7 references indexed in Scilit:
- Photoemission Studies of CdTePhysical Review B, 1967
- Energy Structure in Photoelectric Emission from Cs-Covered Silicon and GermaniumPhysical Review B, 1966
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Measurement of Photoemitted Electron Energy Distributions by an ac MethodReview of Scientific Instruments, 1964
- Effect of Surface Damage on the Reflectance of Germanium in the 2650–10 000-Å RegionJournal of the Optical Society of America, 1963
- Optical Properties of SemiconductorsPhysical Review B, 1963
- Optical Constants of Germanium in the Region 1 to 10 evPhysical Review B, 1959