Empirical Modeling of Low Energy Boron Implants in Silicon
- 1 September 1985
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 132 (9) , 2218-2223
- https://doi.org/10.1149/1.2114323
Abstract
The depth distribution of low energy boron implants in silicon are analyzed using secondary ion mass spectroscopy. The profiles for equivalent energy implants of B+ (10–30 keV) and (50–120 keV) are compared. Fluorine trapping in implants is also investigated. New range parameters are extracted from the measured profiles using a least squares fitting technique. The Pearson IV distribution provides an excellent representation of the doping profile in B+ implants, while for implants the profiles are better represented using a gaussian distribution with an attached exponential tail.Keywords
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