Thermodynamic treatment of hot-carrier transport
- 1 March 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (3B) , B375-B378
- https://doi.org/10.1088/0268-1242/7/3b/098
Abstract
Hot-carrier transport is analysed by a formalism of irreversible thermodynamics. The entropy production rate in hot-carrier transport is derived to evaluate the validity of the analytical flow expressions, which had been derived using high carrier-carrier scattering. The analytical expressions are used to investigate thermodynamics involved in hot-carrier transport, which includes the relation to thermoelectric effects, the conformation to Onsager's theorem and the effect of scattering mechanisms. The expressions have already been successfully applied to silicon hot-electron transport and silicon hot-hole transport.Keywords
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