Fully Integrated SiGe-BiCMOS Receiver(RX) and Transmitter(TX) Chips for 76.5 GHz FMCW Automotive Radar Systems Including Demonstrator Board Design
- 1 June 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE/MTT-S International Microwave Symposium
- p. 1307-1310
- https://doi.org/10.1109/mwsym.2007.380434
Abstract
Advancements in SiGe device development enable the realization of 76.5 GHz FMCW automotive long range radar systems using relatively low-cost silicon technology. This paper presents fully integrated receiver (RX) and transmitter (TX) circuits for wide temperature range operations. The TX chips consists of a VCO with two stage power amplifier, frequency divider chain, power detector circuit and operational amplifier to on-chip compensate the temperature drift of the center frequency. The RX chips is based on a 38.25 GHz doubler, a 76.5 GHz LNA, a passive balun, a fully balanced mixer and IF buffer. Also the integration and combination with planar patched antennas on a demonstrator board was discussed.Keywords
This publication has 2 references indexed in Scilit:
- Characterization and Modeling of Wire Bond Interconnects up to 100 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- A 77 GHz (W-band) SiGe LNA with a 6.2 dB Noise Figure and Gain Adjustable to 33 dBPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006