Hall-Effect Measurements of n-Type Gallium Phosphide
- 1 October 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (10) , 3228-3232
- https://doi.org/10.1063/1.1702954
Abstract
Hall measurements of GaP crystals grown by several different methods and doped with S, Te, Si, and Ge show n‐type behavior with donor concentrations ranging from 1016 to 1019 cm−3. Binding energies for the donor states at concentrations of 1018 cm−3 were estimated at 0.089±0.020 eV for S, 0.076±0.020 eV for Te, and 0.078±0.020 eV for Si. The electron mobility was usually between 60 and 100 cm2/V‐sec at room temperature and varied widely with temperature.This publication has 10 references indexed in Scilit:
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