Block copolymers as additives: a route to enhanced resist performance

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Abstract
The role of block copolymers as additives for improving resist performance in the area of 193 nm lithography is investigated in this study. We have demonstrated that specifically designed block copolymers when tailored to resist matrices to which they are added can profoundly enhance resist imaging performance. This improvement can be attributed to the ability of the block copolymers to modify surface and interfaces and to control photoacid generator distribution within the resist film. Ion beam techniques such as Rutherford Backscattering and Forward Recoil Spectrometry, used to analyze the distribution and segregation behavior of the photoacid generators and block copolymer additives, will also be described.

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