Threshold and memory switching in thin films of the chalcogenide systems Ge-As-Te and Ge-As-Se
- 1 June 1971
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 7 (6) , 391-404
- https://doi.org/10.1016/0040-6090(71)90036-8
Abstract
No abstract availableThis publication has 35 references indexed in Scilit:
- Thermally induced transformations in glassy chalcogenidesJournal of Non-Crystalline Solids, 1970
- Optical properties of chalcogenide glassesJournal of Non-Crystalline Solids, 1970
- The Conduction Mechanism of Self‐Compensated Highly Disordered Semiconductors (A Possible Model for Semiconducting Glasses)Physica Status Solidi (b), 1969
- The Conduction Mechanism of Highly Disordered Semiconductors (A Possible Model for Semiconducting Glasses) II. Influence of Charged DefectsPhysica Status Solidi (b), 1969
- Hall effect measurement in semiconducting chalcogenide glasses and liquidsBritish Journal of Applied Physics, 1967
- Electrons in disordered structuresAdvances in Physics, 1967
- Electronic conduction in As 2 Se 3 , As 2 Se 2 Te and similar materialsBritish Journal of Applied Physics, 1966
- Electrical Conduction Anomaly of Semiconducting Glasses in the System As—Te—IJournal of the American Ceramic Society, 1964
- Vitreous Semiconductors (I)Physica Status Solidi (b), 1964
- Vitreous Semiconductors (II)Physica Status Solidi (b), 1964