For growth of epitaxial silicon by the process onto silicon surfaces oriented from 0° to 9° off {100}, data are reported on the lateral motion of fabricated macrosteps (∼500Aå high) and on the resultant displacement of shallow surface depressions bounded by the steps. The displacements ranged from less than a tenth of the layer thickness to greater than twice the layer thickness, depending on the surface orientation. The depressions mark the sites of localized n+ diffused regions which become buried layers after epitaxy in the fabrication of integrated circuits. Step‐broadening was found to be anomalously large for exact {100} surfaces for growth at 1215°C, whereas all orientations from 0° to 9° off {100} had similar step‐broadening at 1240°C. At 1240°C, the displacement of the center of the depression relative to the center of the buried layer was a minimum for exact {100} surfaces. Both advancing and receding step‐motion was found, and the symmetry of the step‐ motion was consistent with the crystal symmetry as previously reported for surfaces near {111}. A design graph is developed relating the necessary tolerce of substrate orientation near {100} to the desired epitaxial thickness and allowable alignment errors of masks during the fabrication of integrated circuits. For example, with an allowable 1 µm displacement and with ≤15 µmepitaxial thickness, the surface should be {100} within 10 min of arc, whereas up to 30 min off {100} is adequate for ≤2 µm displacement with a 7 µm epitaxial layer.