Analysis on fm efficiency of InGaAs/InGaAsP SCH-MQW LDs Taking Injection Carrier Transport into Account
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 174-175
- https://doi.org/10.1109/islc.1992.763625
Abstract
Injection carrier transport from SCH layers to wells in SCH-MQW LDs was found to play an important role for FM response. Both of the measured and the calculated results indicate that wide SCH layer is desirable for high FM efficiency operation.Keywords
This publication has 3 references indexed in Scilit:
- Carrier capture times in 1.5 μm multiple quantum well optical amplifiersApplied Physics Letters, 1992
- Well-barrier hole burning in quantum well lasersIEEE Photonics Technology Letters, 1991
- Sub-MHz spectral linewidth in 1.5μm separate-confinementheterostructure (SCH) quantum-well DFB LDsElectronics Letters, 1989