Diffusion-limited interaction of dislocation loops and interstitials during dry oxidation in silicon
- 25 July 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (4) , 436-438
- https://doi.org/10.1063/1.112325
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A Point Defect Based Two‐Dimensional Model of the Evolution of Dislocation Loops in Silicon during OxidationJournal of the Electrochemical Society, 1994
- Experimental investigation and modeling of the role of extended defects during thermal oxidationJournal of Applied Physics, 1993
- A study of point defect detectors created by Si and Ge implantationJournal of Applied Physics, 1993
- Oxidation‐Induced Point Defects in SiliconJournal of the Electrochemical Society, 1982