GaAs HBT PIN diode attenuators and switches
- 31 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 349-352 vol.1
- https://doi.org/10.1109/mwsym.1993.276806
Abstract
Reports on an AlGaAs/GaAs HBT (heterojunction bipolar transistor) two-stage PIN diode and a one-open two-throw X-band PIN diode switch. The two-stage PIN attenuator has a greater than 50 dB dynamic range at 2 GHz and a maximum IP3 of 9 dBm. The minimum insertion loss is 1.7 dB per stage and there is a flat response of 10 GHz. The X-band switch has an insertion loss of 0.82 dB and an off-isolation of 25 dB. The bandwidth is greater than 35% and the IP3 is greater than 34.5 dBm. Both of these circuits consist of PIN diodes constructed from the base-collector MBE (molecular beam epitaxy) layers oo he baseline HBT process. This work demonstrates the monolithic integration of PIN diode switch and attenuation functions in an HBT technology without additional process of MBE material growth.Keywords
This publication has 2 references indexed in Scilit:
- A monolithic high power Ka-band PIN switchPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 100 MHz to 20 GHz monolithic single-pole, two-, three-, and four-throw GaAs PIN diode switchesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002