Nonequivalent heterointerfaces in AlGaAs/GaAs double barrier resonant tunnelling diodes grown by metalorganic vapour phase epitaxy
- 7 December 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (25) , 1709-1711
- https://doi.org/10.1049/el:19891143
Abstract
The peak/valley current ratio of AlGaAs/GaAs double barrier resonant tunnelling diodes at room temperature is found to be very sensitive to the quality of the GaAs/AlGaAs interface, while the AlGaAs/GaAs interface is much less critical.Keywords
This publication has 0 references indexed in Scilit: