In-depth concentration profiling of garnet epilayers using secondary ion mass spectrometry
- 1 March 1977
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 12 (3) , 283-286
- https://doi.org/10.1007/bf00915203
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Charging of insulators by ion bombardment and its minimization for secondary ion mass spectrometry (SIMS) measurementsJournal of Applied Physics, 1976
- Secondary ion mass spectrometry of compositional changes in garnet filmsJournal of Crystal Growth, 1975
- Liquid phase epitaxial growth kinetics of magnetic garnet films grown by isothermal vertical dipping from unstirred fluxed meltsJournal of Crystal Growth, 1974
- Controlled lattice constant mismatch by compositional changes in liquid phase epitaxially grown single crystal films of rare earth yttrium iron gallium garnets on gadolinium gallium garnet substratesJournal of Crystal Growth, 1972