In situ controlled fabrication of stacks of high-Tc intrinsic Josephson junctions
- 31 March 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (13) , 1760-1762
- https://doi.org/10.1063/1.119079
Abstract
Stacked series arrays of intrinsic Josephson (IJ) tunnel junctions have been fabricated on the surfaces of Bi2Sr2CaCu2O8+δ single crystals using photolithography and Ar-ion milling together with in situ monitoring of the resulting current–voltage (I–V) characteristics. The number of unit-cell-sized junctions in the stack (along the c-axis) may be varied from 1–5 to ∼200 in a controlled way. The c-axis resistivity ρc, estimated from the resistance of an individual tunnel junction is ≈30 Ω cm at 90 K. The temperature dependence ρc(T)∝ exp(Λ/T) with Λ≈43 meV, suggesting thermally activated hopping mechanism of transport in the c-axis direction.Keywords
This publication has 7 references indexed in Scilit:
- Strong temperature dependence of the -axis gap parameter of intrinsic Josephson junctionsPhysical Review B, 1996
- 70 K hysteretic Josephson effect in mesas patterned on (Bi,Pb)2Sr2CaCu2Oy single crystalsJournal of Applied Physics, 1994
- Intrinsic Josephson effects in high-superconductorsPhysical Review B, 1994
- Wet chemical etching of high-temperature superconducting Y-Ba-Cu-O films in ethylenediaminetetraacetic acidApplied Physics Letters, 1989
- Anisotropic critical current density in superconducting Bi2Sr2CaCu2O8 crystalsApplied Physics Letters, 1989
- Non-Equilibrium Superconductivity in Aluminium Tunnel Junctions by Self-Injection and Millimeter Wave RadiationPhysica Scripta, 1985
- Study of the nonequilibrium state of superconductors by large quasiparticle injection from an external current sourcePhysical Review B, 1977