A model of a narrow-width MOSFET including tapered oxide and doping encroachment

1 December 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (12) , 1490-1495
https://doi.org/10.1109/T-ED.1981.20635

Abstract

A closed-form analytical expression is developed to predict the threshold voltage of a narrow-width MOSFET. The analytical expression developed is the first to include the effects of a recessed tapered oxide, the depletion charge under the thick recessed field oxide due to gate contact overlap and field doping encroachment at the channel edges. The theory is compared with experimental results and the agreement is dose.

Keywords

MODEL
EXPERIMENTAL
MOSFET
WIDTH
THICK
TAPERED
RECESSED
DOPING ENCROACHMENT