AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation

• 1 April 2002
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 389-393, 1527-1530
• https://doi.org/10.4028/www.scientific.net/msf.389-393.1527

Abstract

Keywords

• ALGAN
• BREAKDOWN VOLTAGE
• GALLIUM NITRIDE (GAN)
• HFET
• MOBILITY
• ON-STATE RESISTANCE
• TRANSCONDUCTANCE