Au(Pt)Pd ohmic contacts to p -ZnTe

4 March 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (5) , 503-505
https://doi.org/10.1049/el:19930337

Abstract

Au(Pt)Pd ohmic contacts to p-ZnTe are reported, with a determination of the optimum annealing temperature and the optimum Pd layer thickness. The specific contact resistance, measured by the transmission line method, was as low as 5 × 10⁻⁶ωcm⁻². This value of the specific contact resistance is two orders of magnitude lower than that of Au or Au/Pt contact to p-ZnTe.

Keywords

SPECIFIC CONTACT RESISTANCE
P-TYPE SEMICONDUCTOR
OPTIMUM ANNEALING TEMPERATURE
OHMIC CONTACTS
AU-PT-PD-ZNTE
OPTIMUM PD LAYER THICKNESS

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