The Photoelectrochemistry of Gallium Selenide
- 1 June 1980
- journal article
- research article
- Published by Wiley in Berichte der Bunsengesellschaft für physikalische Chemie
- Vol. 84 (6) , 596-601
- https://doi.org/10.1002/bbpc.19800840615
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- The Role of Surface Orientation in the Photoelectrochemical Behavior of Layer Type d‐Band SemiconductorsBerichte der Bunsengesellschaft für physikalische Chemie, 1979
- Anodization of Layered Semiconductors: A Representation of the Layer PeriodicityJournal of the Electrochemical Society, 1979
- Influence of crystal surface orientation on redox reactions at semiconducting MoS2Electrochimica Acta, 1979
- Electrochemical Solar Cell Based on the d‐Band Semiconductor Tungsten‐DiselenideBerichte der Bunsengesellschaft für physikalische Chemie, 1978
- Photovoltaic properties of some semiconducting layer structuresPhysica Status Solidi (a), 1978
- Hole Reactions from d‐Energy Bands of Layer Type Group VI Transition Metal Dichalcogenides: New Perspectives for Electrochemical Solar Energy ConversionJournal of the Electrochemical Society, 1978
- N-WSe2/Au, P-ZnAs2/Mg and P-SnS/Mg Schottky Barrier CellsPublished by Springer Nature ,1978
- Layer‐Type Transition Metal Dichalcogenides — a New Class of Electrodes for Electrochemical Solar CellsBerichte der Bunsengesellschaft für physikalische Chemie, 1977
- Optical properties of GaSe andmixed crystalsPhysical Review B, 1976
- The electronic charge densities in semiconducting layer and chain structuresJournal of Physics and Chemistry of Solids, 1974