Photocurrent and diffusion lengths at the vicinity of grain boundaries (g.b.) in N and P-type polysilicon. Evaluation of the g.b. recombination velocity)
- 1 January 1982
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 17 (3) , 119-124
- https://doi.org/10.1051/rphysap:01982001703011900
Abstract
Photocurrents, diffusion lengths (L) and g.b. recombination velocities (s) have been measured by optical scanning in N and P-type polysilicon. With type of grains, L is found to vary between 5 03BCm and 150 03BCm and s is always higher than 104 cm.s-1. The results on local measurements of diffusion lengths show that the vicinity of a g.b. is highly stressed. It seems that the g.b. potential barriers are higher in N-type than in P-type.Keywords
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