Observation of Electroluminescence from Amorphous Silicon Solar Cells at Room Temperature

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Abstract
Electroluminescence from a-Si pin, pi(B-doped)n, and nip solar cells was observed at room temperature (300 K) for the first time. The electroluminescence spectrum of the nip cell showed very broad with a peak at 1.31 eV or slightly less. The external quantum efficiency of the nip cell was 10-5% at 300 K. Electroluminescence intensity from this cell was stronger than that from the pin cell. It became clear that this can be attributed to the difference in the current transport mechanism of the nip and pin cells. A pin cell whose i-layer was slightly boron doped, the pi(B)n cell, gave a stronger electroluminescence intensity than a usual pin cell.

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