Deposition and characterization of p-type cadmium telluride films

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Abstract
The deposition of CdTe films on foreign substrates by the direct combination of the elements in a gasflow system has the flexibility that the conductivity type and electrical resistivity of the film can be controlled by adjusting the composition of the reaction mixture. The deposition and properties of p‐type CdTe films are emphasized in this paper because of its importance in thin‐film solar cells. Graphite, W/graphite, mullite, and Corning 7059 glass were used as substrates for the deposition process. While CdTe films deposited on W/graphite and mullite substrates could be n or p type, depending on the composition of the reaction mixture, all films deposited on graphite substrates were p type, irrespective of the reactant composition, substrate temperature, or the purification of graphite, suggesting that carbon is electrically active in CdTe. The resistivity of p‐type CdTe films on W/graphite and mullite substrates has been controlled for the first time by (1) using a Cd‐deficient reaction mixture, and (2) adding dopants (AsH3 or PH3) to the reaction mixture. The resistivity versus composition relation was studied in detail. The optical properties of nearly stoichiometric, Cd‐deficient and Te‐deficient CdTe films were also investigated.

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