Composition of Phosphosilicate Glass by Infrared Absorption

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Abstract
The ratio of the intensity of the absorbance band at ∼1325 cm−1 to that of the band at ∼1050 cm−1 has been correlated with the composition of vapor‐deposited phosphosilicate glasses over the range 0–20 mol per cent . While the ratio of the linear absorbances of these bands depends somewhat on deposition temperature as well as on film composition, the ratio of the areas of these bands is uniquely related to film composition over the range of deposition temperature studied. The deposition rates and compositions of these films (for a constant flow of reactant gases) were found to be relatively weakly dependent on deposition temperature. These results for phosphosilicate glass combined with previously published calibration curves for borosilicate and arsenosilicate glasses allow the rapid, nondestructive determination of the compositions of all three doped glasses commonly used as sources for impurity diffusion into silicon.

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