An investigation of the MESFET "End" resistance using a distributed diode/resistance model

1 November 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 32 (11) , 2262-2268
https://doi.org/10.1109/T-ED.1985.22268

Abstract

Transport equations applicable to forward biased Schottky barriers or junction-gate FET's with open-circuit drain have been solved for dc and small-signal ac current-voltage characteristics, treating the system as a distributed diode/resistance network. Universal graphs have been presented that show the dependence of the MESFET three terminal resistances on the forward diode current. Series resistances of test MESFET's, with a wide range of gate-length values, have been experimentally evaluated after allowing for the channel distributed resistance effects. These results indicate that free surface depletion in the electrode gap regions have significant effects on the FET series resistance components.

Keywords

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