Preparation of Si3N4 coatings by ion plating

Publisher Website
Google Scholar
Abstract
Ion plating experiments have been used to deposit silicon-nitride coatings on n- and p-type 85 Si–15 Mo. The presence of phosphorus in n-type 85 Si–15 Mo (which is doped beyond its solubility limit) influenced the grain size of the deposit. Mass spectrographic analyses of uncoated and coated substrates yielded phosphorus and SiO partial pressures above these substrates when they were held at 1100 °C. All coatings were hyperstoichiometric in silicon relative to Si3N4. Rates of evaporation for these coatings are plotted as a function of time at 1100 °C and 10−9 Torr. Sample weight loss rates were highest in uncoated controls and lowest in Si3N4-coated p-type 85 Si–15 Mo.

This publication has 0 references indexed in Scilit: