A Diffusion of Positrons by an Electric Field in MOS Transistors

• 1 January 1992
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 105-110, 1475-1478
• https://doi.org/10.4028/www.scientific.net/msf.105-110.1475

Abstract

Keywords

• DOPPLER BROADENING PROFILE
• INTERFACE
• METAL-OXIDE-SEMICONDUCTOR (MOS)
• MONOENERGETIC POSITRON BEAM
• SILICON