Improved morphology of Au-Based contacts to GaAs

1 May 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (5) , 200-201
https://doi.org/10.1109/edl.1987.26602

Abstract

Evidence is given that Au and Au-based contacts do not react with GaAs substrate when alloyed with a CVD SiO2layer deposited on top of the metal. Reduced reactivity results in a significantly better morphology of the contact as compared with those alloyed conventionally. Lower electrical resistivities of Au(Zn)/p-GaAs and Au(GeNi)/n-GaAs ohmic contacts are obtained in a wider range of processing temperatures.

Keywords

GALLIUM ARSENIDE
GOLD
SURFACE MORPHOLOGY
ANNEALING
ELECTRIC RESISTANCE
PROTECTION
OHMIC CONTACTS
TEMPERATURE DISTRIBUTION
THERMODYNAMICS
ALLOYING

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