A Developmental Germanium P-N-P Junction Transistor

1 November 1952

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE

Vol. 40 (11) , 1352-1357
https://doi.org/10.1109/jrproc.1952.273961

Abstract

A developmental germaniump-n-p junction transistor that may be readily made in the laboratory by alloying indium into opposite faces of a wafer of single-crystal n-type germanium is described. It is shown that this laboratory technique gives experimental transistors with desirable characteristics. Distribution curves of measured characteristics are given for a typical run of 118 units made and tested under similar conditions. Power gains up to 46 db, "alpha" up to 0.997, and noise factor (1 kc) as low as 6 db were achieved.

Keywords

This publication has 4 references indexed in Scilit:

$p - n$ Junction Transistors
Physical Review B, 1951
Some Circuit Properties and Applications of n-p-n Transistors
Proceedings of the IRE, 1951
$P - N$ Junctions Prepared by Impurity Diffusion
Physical Review B, 1950
Das Verhalten der Elemente der III. Gruppe zueinander und zu den Elementen der IV. Gruppe
Zeitschrift für anorganische und allgemeine Chemie, 1948