Molecular beam epitaxial growth of GaP on Si
- 15 April 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8) , 2916-2927
- https://doi.org/10.1063/1.333333
Abstract
The molecular-beam epitaxial growth of GaP on Si was investigated, with the aim of at least approaching device-quality interfaces. Gallium-primed growth on (211)-oriented substrates yielded layers which were free of antiphase domains, and which were of much higher quality than growths on other orientations. A tentative energy-band lineup is proposed, which is consistent with the electrical data. Heterojunction bipolar transistors were fabricated with emitter injection efficiencies up to 90%, in spite of indications that the epitaxial emitter layer was far less heavily doped than the base.This publication has 23 references indexed in Scilit:
- The growth of a GaP epilayer on Si substrates by metallorganic CVDJournal of Physics D: Applied Physics, 1982
- LEED investigation of the Si (112) surface structureSurface Science, 1982
- Heteroepitaxial Growth of GaP on a Si (100) Substrate by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1982
- Electron escape depths in germaniumSurface Science, 1981
- Combined LEED, AES, and work function studies during the formation of Ge : GaAs(110) heterostructuresJournal of Vacuum Science and Technology, 1980
- Polar heterojunction interfacesPhysical Review B, 1978
- Heteroepitaxial Growth of GaP on Silicon by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1978
- Surface reconstruction on semiconductorsSurface Science, 1976
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Electron Mobility in Ge, Si, and GaPPhysica Status Solidi (b), 1972