Structural investigations of GaN grown by low-pressure chemical vapor deposition on 6H–SiC and Al2O3 from GaCl3 and NH3
- 15 August 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (4) , 1890-1895
- https://doi.org/10.1063/1.365994
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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