Electrolysis of SiO2 on Silicon

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Abstract
The application of an external voltage across a layer of SiO2 on silicon causes a reduction in the thickness of the oxide layer by electrolysis when the applied voltage exceeds the theoretical cell voltage of the cell O2, Pt/SiO2/Si and the electric field is oriented such that the silicon–silicon dioxide interface is negative with respect to the oxide–gas interface. A measurement of the stopping voltage reveals that four equivalents are involved in the reaction, thus indicating that O= ions or some similarly charged defect could be involved in the electrolysis. Further evidence shows that the transport of uncharged oxygen species is negligible during the electrolysis of SiO2.

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