Photoluminescence from epitaxial Si/Si0.95Ge0.05 heterostructures as probed by optically active deep levels
- 1 July 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 9 (4) , 2388-2393
- https://doi.org/10.1116/1.585708
Abstract
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