The growth and characterization of a-sexithienyl–based light–emitting diodes

Abstract
We describe the mechanisms of growth of sublimed thin films of α–sexithienyl and how the morphology of the films can be controlled by using different growth conditions and substrates. The molecules of α–T6 prefer to stand upright on the substrate surface if possible, forming a highly ordered film, and we find that partially polarized photoluminescence and electroluminescence is possible from these films provided that energy migration to randomly oriented defect sites is properly controlled.