Technique for Measuring Particle Drift Mobilities in Near Intrinsic and Narrow Band Gap Semiconductors
- 1 March 1959
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (3) , 451-452
- https://doi.org/10.1063/1.1735196
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Characteristics of Junctions in GermaniumJournal of Applied Physics, 1958
- Use of Infrared Absorption in Germanium to Determine Carrier Distributions for Injection and ExtractionPhysical Review B, 1956
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- Experimental Confirmation of Relation between Pulse Drift Mobility and Charge Carrier Drift Mobility in GermaniumPhysical Review B, 1953