Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
- 1 April 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (4B) , L672
- https://doi.org/10.1143/jjap.30.l672
Abstract
It is shown that a preheating process in a pure hydrogen atmosphere with a (NH4)2S x treatment was effective for improvement of the regrown interface in InP organometallic vapor phase epitaxy (OMVPE). The carrier concentration was under 5×1015 cm-3 in the entire region after the regrowth, even if we carried out various dummy processes of fabrication between the first growth and the surface treatment for improvement. Thus, this improvement will be useful for the device-required regrowth process after fabrication of an ultrafine-size structure.Keywords
This publication has 6 references indexed in Scilit:
- Vacuum lithography for in situ fabrication of buried semiconductor microstructuresApplied Physics Letters, 1990
- Buried rectangular GaInAs/InP corrugations of 70 nm pitch fabricated by OMVPEElectronics Letters, 1990
- Sulfur as a surface passivation for InPApplied Physics Letters, 1988
- The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS StructuresJapanese Journal of Applied Physics, 1988
- The effect of surface preparation on the production of low interfacial charge regrown interfacesJournal of Crystal Growth, 1986
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982