MBE Grown AlGaAs/GaAs HBTs with Direct-Radiation Substrate Heating
- 1 November 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (11R)
- https://doi.org/10.1143/jjap.24.1567
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Current Gain Enhancement in Graded Base AlGaAs/GaAs HBTs Associated with Electron Drift MotionJapanese Journal of Applied Physics, 1985
- Summary Abstract: MBE film growth by direct free substrate heatingJournal of Vacuum Science & Technology B, 1985
- Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 1984
- Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layersJournal of Applied Physics, 1973