The etch mechanisms of magnetic materials in an HCl plasma
- 1 May 1993
- journal article
- Published by Elsevier in Journal of Nuclear Materials
- Vol. 200 (3) , 366-370
- https://doi.org/10.1016/0022-3115(93)90310-u
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Etching reactions for silicon with F atoms: Product distributions and ion enhancement mechanismsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Determination of the power and current densities in argon and oxygen plasmas by i n s i t u temperature measurementsJournal of Vacuum Science & Technology A, 1989
- Sheath collision processes controlling the energy and directionality of surface bombardment in O2 reactive ion etchingJournal of Applied Physics, 1988
- Mechanisms of sputtering of Si in a Cl2 environment by ions with energies down to 75 eVJournal of Applied Physics, 1988
- Quantitative sputteringSurface and Interface Analysis, 1988
- Argon-ion assisted etching of silicon by molecular chlorineJournal of Applied Physics, 1984
- Adsorption and reactions of CO, NO, H2 and O2 on group VIII metal surfacesSurface Science, 1983