Plasma-processed positive and negative resist behavior of obliquely deposited amorphous P–Se films
- 1 November 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 3 (6) , 1590-1593
- https://doi.org/10.1116/1.582944
Abstract
Thin films of amorphous phosphorus decaselenide (P4Se10) have been explored for lithographic applications. Depending on the substrate temperature during plasma etching in CF4 gas, either positive or negative resist behavior is observed. The effects of substrate temperature and exposure time on etching characteristics are discussed. Contrast values of 2.5 and 2.9 for positive and negative resist, respectively, have been obtained.Keywords
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