The emergence of superlattice and Stark ladder phenomena in finite layered structures
- 1 March 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (3) , 200-205
- https://doi.org/10.1088/0268-1242/5/3/003
Abstract
The authors present the results of a pseudopotential many-band calculation for electron tunnelling through alternate layered structures of GaAs/AlAs for both zero field and applied electric fields. The build-up of superlattice properties and Stark ladder states are clearly seen. The results are illustrated within an analytic tight-binding model.Keywords
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