Monolithic GaAs MESFET power sensor microsystem
- 26 October 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (22) , 1914-1915
- https://doi.org/10.1049/el:19951295
Abstract
The authors present the principle, technology and properties of a novel power sensor microsystem designed for very precise power measurement in a broad frequency range. Bulk micromachining technology on GaAs was implemented to obtain the desired parameters of the sensor.Keywords
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