Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits
- 1 January 1987
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- AlGaAs/InGaAs/GaAs strained-layer heterojunction bipolar transistors by molecular beam epitaxyElectronics Letters, 1986
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982