Recovery of Structural Defects in GaN After Heavy Ion Implantation

This publication has 15 references indexed in Scilit:

• Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
  MRS Internet Journal of Nitride Semiconductor Research, 1997
• Emission channeling
  Hyperfine Interactions, 1996
• Damage to epitaxial GaN layers by silicon implantation
  Applied Physics Letters, 1996
• Ion-implanted GaN junction field effect transistor
  Applied Physics Letters, 1996
• Implantation and redistribution of dopants and isolation species in GaN and related compounds
  Solid-State Electronics, 1995
• GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers
  Applied Physics Letters, 1995
• p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
  Applied Physics Letters, 1994
• Defects in CdS: In detected by perturbed angular correlation spectroscopy (PAC)
  Applied Surface Science, 1991
• Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy
  Applied Physics A, 1989
• The Stopping and Range of Ions in Solids
  Published by Springer Nature ,1982