Annealing of Bombardment Damage in Germanium: Experimental

Abstract
Experiments have been performed on the annealing of bombardment damage in germanium above room temperature. The damage was produced by 3-Mev electrons and consisted primarily of isolated vacancy-interstitial pairs. The extent of the damage was determined by measurement of the change in conductivity of n-type samples. From the annealing results, the activation energy for the diffusion of vacancies in germanium was found to be about 1.7 ev. The actual annealing curves have been fitted in terms of the model of the annealing process described in the preceding paper.