Radiation effects in silicon charge-coupled devices
Open Access
- 1 January 1980
- book chapter
- Published by Springer Nature
- p. 147-176
- https://doi.org/10.1007/3-540-09832-1_6
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- A New Physical Mechanism for Soft Errors in Dynamic MemoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978
- Gamma noise in CCDsInfrared Physics, 1975
- Hole mobility and transport in thin SiO2 filmsApplied Physics Letters, 1975
- Low−temperature irradiation effects in SiO2−insulated MIS devicesJournal of Applied Physics, 1975
- The effects of bulk traps on the performance of bulk channel charge-coupled devicesIEEE Transactions on Electron Devices, 1974
- Radiation effects on semiconductor devicesProceedings of the IEEE, 1974
- Effects of gamma radiation on charge-coupled devicesApplied Physics Letters, 1973
- Properties of 1.0-MeV-Electron-Irradiated Defect Centers in SiliconPhysical Review B, 1973
- Introduction Rates of Electrically Active Defects in n- and p-Type Silicon by Electron and Neutron IrradiationJournal of Applied Physics, 1968