Theory of triangular-barrier bulk unipolar diodes including minority-carrier effects
- 1 February 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (2) , 90-96
- https://doi.org/10.1109/T-ED.1983.21080
Abstract
The effect of the minority-carrier charge on the barrier height of the triangular-barrier (TB) majority-carrier diode is considered. The consequences of this effect on the device performance as a diode, transistor, photodetector, and a thyristor is briefly delineated. A two-carrier model of the TB diode is developed to account for this effect. Four other approximate models of the TB diode are compared with the two-carrier model, and the range of their validity established. A high-gain TB "transistor" is proposed based on the mechanism of barrier-height modulation via minority-carrier injection in the TB diode.Keywords
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