An Intense Pulsed Barium Ion Source
- 1 June 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (3) , 3378-3379
- https://doi.org/10.1109/tns.1981.4332109
Abstract
A magnetically insulated diode has been used to produce 30 A/cm2, 250 keV, Ba+ion pulses for 170-200 nsec, using BaF2 as the ion source material. Other operating conditions yield pulse of Ba+ and F+ ions at 300 keV and Ba+2ions at 600 keV. The beam is diagnosed with time-of-flight analysis, Secondary Ion Mass Spectioscopy, and Rutherford backscattering of 2.3 MeV helium ions.Keywords
This publication has 3 references indexed in Scilit:
- Ion beam annealing of semiconductorsApplied Physics Letters, 1980
- Intense lithium, boron, and carbon beams from a magnetically insulated diodeApplied Physics Letters, 1980
- Recent Progress and Plans for Heavy Ion FusionIEEE Transactions on Nuclear Science, 1979