Growth of Ga1−xInxAs/GaAs1−yPy multiple quantum well structures by gas source molecular beam epitaxy
- 1 March 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (2) , 949-952
- https://doi.org/10.1116/1.586097
Abstract
We examine growth of Ga1−xInxAs/GaAs1−yPy multiple quantum well structures by gas source molecular beam epitaxy for photonic switching applications at 1.06 μm. For appropriate x and y values these structures can be grown pseudomorphically at the GaAs lattice constant. Such structures show good morphology, room‐temperature photoluminescence and sharp excitonic absorption edges near 1.06 μm.Keywords
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