Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlattices
- 1 June 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 89 (2-3) , 331-338
- https://doi.org/10.1016/0022-0248(88)90418-6
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 8 references indexed in Scilit:
- Excitonic and edge emission in MOCVD-grown epitaxial films and bulk crystal of ZnSJournal of Luminescence, 1988
- Evaluation of interface defects and the effect of iodine impurity in low-resistivity metal-organic chemical vapor deposition-grown ZnS films on GaAsJournal of Vacuum Science & Technology B, 1987
- Photoluminescence and excitation spectra of Zn1−xMnxSe films and superlattices grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Recent developments in the MOVPE of II–VI compoundsJournal of Crystal Growth, 1985
- Optical and electrical properties of PbTe-Pb1−xSnxTe superlattices prepared on KC1 by a HWESurface Science, 1984
- Excitonic and time-resolved edge emissions of iodine-doped cubic ZnS crystals excited by an excimer laserSolid State Communications, 1984
- Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structuresSolid State Communications, 1983
- Conduction mechanism in low-resistivity n-type ZnSe prepared by organometallic chemical vapor depositionJournal of Applied Physics, 1982