Effect of near-contact regions on the interpretation of ohmic behavior in trap-dominated relaxation semiconductors
- 15 September 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (6) , 2294-2298
- https://doi.org/10.1063/1.351571
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Experimental study of transport in a trap-dominated relaxation semiconductorPhysical Review B, 1991
- Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injectionApplied Physics Letters, 1991
- Relaxation semiconductors: In theory and in practiceApplied Physics A, 1991
- On space-charge-limited conduction in semi-insulating GaAsSolid-State Electronics, 1988
- Electronic charge transport in high-resistivity semiconductorsPhilosophical Magazine Part B, 1985
- The interpretation of ohmic behavior in semi-insulating gallium arsenide systemsJournal of Applied Physics, 1981
- Electrical and photoelectronic properties of Cr-doped semi-insulating GaAsJournal of Applied Physics, 1979
- Minority-carrier injection into semi-insulatorsPhysical Review B, 1976
- Current transport in relaxation-case GaAsPhysical Review B, 1975
- Transport in Relaxation SemiconductorsPhysical Review B, 1972